The WMBTA92 is designed as one kind of NPN epitaxial silicon transistor that has four points of features:(1)power dissipation: 225mW; (2)collector current: max. 0.5 A ;(3)die size 0.6 mm x 0.6 mm; (4)bonding pad size: mitoe - 100 mkm x 100 mkm. The guaranteed probed characteristics of the WMBTA92 can be summarized as:(1)Collector-emitter Breakdown Voltage: 300 V;(2)Collector-Base Breakdown Voltage: 300 V;(3)Emitter Cut-off Current: 100 nA;(4)Collector Cut-off Current: 100 nA;(5)Transition Frequency: 50 MHz;(6)Collector-Base Capacitance: 3.0 PF; (7)Collector-Emitter Saturation Voltage: 0.35 V; (8)Base-Emitter Saturation Voltage: 0.90 V.